https://koha.ing.unlp.edu.ar/logo-sii.jpg
Imagen de Google Jackets

Bias Temperature Instability for Devices and Circuits [libro electrónico] / edited by Tibor Grasser.

Colaborador(es): Tipo de material: TextoTextoDetalles de publicación: New York, NY : Springer New York : Imprint: Springer, 2014.Descripción: xi, 810 p. : ilTipo de contenido:
  • text
Tipo de medio:
  • computer
Tipo de soporte:
  • online resource
ISBN:
  • 9781461479093
Tema(s): Formatos físicos adicionales: Printed edition:: Sin títuloClasificación LoC:
  • TK7888.4
Recursos en línea:
Contenidos:
Introduction -- Characterization, Experimental Challenges -- Advanced Characterization -- Characterization of Nanoscale Devices -- Statistical Properties/Variability -- Theoretical Understanding -- Possible Defects: Experimental -- Possible Defects: First Principles -- Modeling -- Technological Impact -- Silicon dioxides/SiON -- High-k oxides -- Alternative technologies -- Circuits.
Resumen: This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability.  Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.  ·         Enables readers to understand and model negative bias temperature instability, with an emphasis on dynamics; ·         Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence; ·         Explains time dependent defect spectroscopy, as a measurement method that operates on nanoscale MOSFETs; ·         Introduces new defect model for metastable defect states, nonradiative multiphonon theory and stochastic behavior.
Tipo de ítem: Libro electrónico Lista(s) en las que aparece este ítem: Ebooks
Valoración
    Valoración media: 0.0 (0 votos)
No hay ítems correspondientes a este registro

Introduction -- Characterization, Experimental Challenges -- Advanced Characterization -- Characterization of Nanoscale Devices -- Statistical Properties/Variability -- Theoretical Understanding -- Possible Defects: Experimental -- Possible Defects: First Principles -- Modeling -- Technological Impact -- Silicon dioxides/SiON -- High-k oxides -- Alternative technologies -- Circuits.

This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability.  Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.  ·         Enables readers to understand and model negative bias temperature instability, with an emphasis on dynamics; ·         Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence; ·         Explains time dependent defect spectroscopy, as a measurement method that operates on nanoscale MOSFETs; ·         Introduces new defect model for metastable defect states, nonradiative multiphonon theory and stochastic behavior.

No hay comentarios en este titulo.

para colocar un comentario.
BIBLIOTECA CENTRAL
    Calle 115 y 47 - (CP1900) La Plata
    Tel: (0221) 423-6689  int 118 -
    Email: bibcentral@ing.unlp.edu.ar
    Horario de atención: Lunes a Viernes de 8 a 19 hs..
    +54 2215900419

Con tecnología Koha