| 000 | 02958Cam#a22004815i#4500 | ||
|---|---|---|---|
| 001 | INGC-EBK-000094 | ||
| 003 | AR-LpUFI | ||
| 005 | 20220927105628.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 131022s2014 xxu| s |||| 0|eng d | ||
| 020 | _a9781461479093 | ||
| 024 | 7 |
_a10.1007/978-1-4614-7909-3 _2doi |
|
| 050 | 4 | _aTK7888.4 | |
| 072 | 7 |
_aTJFC _2bicssc |
|
| 072 | 7 |
_aTEC008010 _2bisacsh |
|
| 245 | 1 | 0 |
_aBias Temperature Instability for Devices and Circuits _h[libro electrónico] / _cedited by Tibor Grasser. |
| 260 | 1 |
_aNew York, NY : _bSpringer New York : _bImprint: Springer, _c2014. |
|
| 300 |
_axi, 810 p. : _bil. |
||
| 336 |
_atext _btxt _2rdacontent |
||
| 337 |
_acomputer _bc _2rdamedia |
||
| 338 |
_aonline resource _bcr _2rdacarrier |
||
| 347 |
_atext file _bPDF _2rda |
||
| 505 | 0 | _aIntroduction -- Characterization, Experimental Challenges -- Advanced Characterization -- Characterization of Nanoscale Devices -- Statistical Properties/Variability -- Theoretical Understanding -- Possible Defects: Experimental -- Possible Defects: First Principles -- Modeling -- Technological Impact -- Silicon dioxides/SiON -- High-k oxides -- Alternative technologies -- Circuits. | |
| 520 | _aThis book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.  ·        Enables readers to understand and model negative bias temperature instability, with an emphasis on dynamics; ·        Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence; ·        Explains time dependent defect spectroscopy, as a measurement method that operates on nanoscale MOSFETs; ·        Introduces new defect model for metastable defect states, nonradiative multiphonon theory and stochastic behavior. | ||
| 650 | 0 |
_aEngineering. _9259622 |
|
| 650 | 0 |
_aSemiconductors. _9259967 |
|
| 650 | 0 |
_aQuality control. _9259696 |
|
| 650 | 0 |
_aReliability. _9259697 |
|
| 650 | 0 |
_aIndustrial safety. _9259698 |
|
| 650 | 0 |
_aElectronics. _9259648 |
|
| 650 | 0 |
_aMicroelectronics. _9259649 |
|
| 650 | 0 |
_aElectronic circuits. _9259798 |
|
| 650 | 2 | 4 |
_aCircuits and Systems. _9259651 |
| 650 | 2 | 4 |
_aInstrumentation. _9259652 |
| 650 | 2 | 4 |
_aRisk. _9259691 |
| 700 | 1 |
_aGrasser, Tibor, _eed. _9260068 |
|
| 776 | 0 | 8 |
_iPrinted edition: _z9781461479086 |
| 856 | 4 | 0 | _uhttp://dx.doi.org/10.1007/978-1-4614-7909-3 |
| 912 | _aZDB-2-ENG | ||
| 929 | _aCOM | ||
| 942 | _cEBK | ||
| 999 |
_aSKV _c27522 _d27522 |
||